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CSPEMI307A
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
R
C
Resistance
Capacitance
Parameter
Conditions
At 2.5 V DC
Min
80
24
Typ
100
30
Max
120
36
Units
W
pF
TCR
Temperature Coefficient of Resistance
1200
ppm/ ° C
TCC
V DIODE
I LEAK
Temperature Coefficient of Capacitance
Diode Voltage (reverse bias)
Diode Leakage Current (reverse bias)
At 2.5 V DC
I DIODE = 10 m A
V DIODE = 3.3 V
5.5
? 300
100
ppm/ ° C
V
nA
V SIG
Signal Voltage
Positive Clamp
Negative Clamp
I LOAD = 10 mA
5.6
? 0.4
6.8
? 0.8
9.0
? 1.5
V
V ESD
V CL
f C
In ? system ESD Withstand Voltage
a) Human Body Model, MIL ? STD ? 883, Method 3015
b) Contact Discharge per IEC 61000 ? 4 ? 2 Level 4
Clamping Voltage during ESD Discharge
MIL ? STD ? 883 (Method 3015), 8 kV
Positive Transients
Negative Transients
Cut ? off frequency
Z SOURCE = 50 W , Z LOAD = 50 W
(Notes 2 and 4)
(Notes 2, 3 and 4)
R = 100 W , C = 30 pF
± 30
± 15
+10
? 5
64
kV
V
MHz
1. T A = 25 ° C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A2, then clamping
voltage is measured at Pin C2.
4. Unused pins are left open.
PERFORMANCE INFORMATION
Typical Filter Performance (T A = 25 5 C, DC Bias = 0 V, 50 W Environment)
Figure 1. Insertion Loss vs. Frequency (A2 ? C2 to GND B2)
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